HexaTech is leading the development and commercialization of the next-generation semiconductor, aluminum nitride (AlN). This wide bandgap semiconductor offers unique materials properties that enable the fabrication of first-in-kind devices for applications in clean water, alternative energy and RF communications.
Lasing breakthrough demonstrated in optically pumped, 264 and 280 nm lasers fabricated on HexaTech AlN substrates MORRISVILLE, N.C., Feb 4, 2013 /PRNewswire/ — In a parallel effort to its development of UV-C light emitting diodes (LEDs), HexaTech recently demonstrated optically pumped, AlGaN-based lasers grown on highest-quality, single crystalline AlN substrates. Laser structures fabricated at HexaTech and […]
Industry-leading manufacturer of single crystal AIN substrates to develop technology for power devices that will revolutionize the future "Smart Grid"; this development will be the first step in establishing epitaxial techniques and demonstrate the superior high voltage performance capability of AIN-based 20kV power devices MORRISVILLE, N.C., Dec. 13, 2012 /PRNewswire/ — HexaTech has received a $2.2 […]
